收藏本站
November 2013
FDB082N15A
N-Channel PowerTrench ? MOSFET
150 V, 117 A, 8.2 m Ω
Features
? R DS(on) = 6.7 m Ω (Typ.) @ V GS = 10 V, I D = 75 A
? Fast Switching Speed
? Low Gate Charge, Q G = 64.5 nC (Typ.)
? High Performance Trench Technology for Extremely Low
R DS(on)
? High Power and Current Handling Capability
? RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor ’s advance PowerTrench ? process that has
been tailored to minimize the on-state resistance while main-
taining superior switching performance.
Applications
? Synchronous Rectification for ATX / Server / Telecom PSU
? Battery Protection Circuit
? Motor drives and Uninterruptible Power Supplies
? Micro Solar Inverter
D
D
G
S
D 2 -PAK
G
S
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted.
Symbol
V DSS
Drain to Source Voltage
Parameter
FDB082N15A
150
Unit
V
V GSS
I D
Gate to Source Voltage
Drain Current
- Continuous (T C = 25 o C, Silicon Limited)
- Continuous (T C = 100 o C, Silicon Limited)
±20
117
83
V
A
I DM
Drain Current
- Pulsed
(Note 1)
468
A
E AS
dv/dt
P D
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate Sbove 25 o C
(Note 2)
(Note 3)
542
6
294
1.96
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +175
300
o C
o C
Thermal Characteristics
Symbol
Parameter
FDB082N15A
Unit
R θ JC
R θ JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
0.51
62.5
o
C/W
?2011 Fairchild Semiconductor Corporation
FDB082N15A Rev. C2
1
www.fairchildsemi.com
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
FDB088N08 MOSFET N-CH 75V 75A D2PAK
FDB110N15A MOSFET N-CH 150V 92A D2PAK
FDB120N10 MOSFET N-CH 100V 74A D2PAK
FDB12N50FTM_WS MOSFET N-CH 500V 11.5A D2PAK
FDB12N50TM MOSFET N-CH 500V 11.5A D2PAK
FDB12N50UTM_WS MOSFET N-CH 500V 10A D2PAK
FDB14AN06LA0_F085 MOSFET N-CH 60V 67A D2PAK
FDB14N30TM MOSFET N-CH 300V 14A D2PAK
相关代理商/技术参数
FDB088N08 功能描述:MOSFET NCH 75V 8.8Mohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB-1 功能描述:化学物质 2OZ POLY BOTTLE 10/ RoHS:否 制造商:3M Electronic Specialty 产品:Adhesives 类型:Epoxy Compound 大小:1.7 oz 外壳:Plastic Tube
FDB101 制造商:BILIN 制造商全称:Galaxy Semi-Conductor Holdings Limited 功能描述:SILICON BRIDGE RECTIFIERS
FDB-1012 制造商:Finisar Corporation 功能描述:GBIC EVALUATION BOARD - Boxed Product (Development Kits)
FDB-1017 制造商:Finisar Corporation 功能描述:EVALUATION BOARD FOR 2X5 PIN SFF FOOTPRINT PACKAGE - Boxed Product (Development Kits)
FDB-1018 功能描述:EVAL BOARD SFP/SFP+ RoHS:是 类别:编程器，开发系统 >> 评估演示板和套件 系列:- 标准包装:1 系列:- 主要目的:数字电位器 嵌入式:- 已用 IC / 零件:AD5258 主要属性:- 次要属性:- 已供物品:板 相关产品:AD5258BRMZ1-ND - IC POT DGTL I2C1K 64P 10MSOPAD5258BRMZ10-ND - IC POT DGTL I2C 10K 64P 10MSOPAD5258BRMZ100-ND - IC POT DGTL I2C 100K 64P 10MSOPAD5258BRMZ50-ND - IC POT DGTL I2C 50K 64P 10MSOPAD5258BRMZ1-R7-ND - IC POT DGTL I2C 1K 64P 10MSOPAD5258BRMZ10-R7-ND - IC POT DGTL I2C 10K 64P 10MSOPAD5258BRMZ50-R7-ND - IC POT DGTL I2C 50K 64P 10MSOPAD5258BRMZ100-R7-ND - IC POT DGTL I2C 100K 64P 10MSOP
FDB-1019 制造商:Finisar Corporation 功能描述:EVALUATION BOARD FOR 2X10 PIN SFF FOOTPRINT PACKAGE - Boxed Product (Development Kits)
FDB101S 制造商:BILIN 制造商全称:Galaxy Semi-Conductor Holdings Limited 功能描述:SILICON BRIDGE RECTIFIERS